| Title | THE PASSIVATION OF GALLIUM-ARSENIDE SURFACES WITH ATOMIC SULFUR |
| Publication Type | Journal Article |
| Year of Publication | 1992 |
| Authors | Gu, GY, Ogryzlo, EA, Wong, PC, Zhou, MY, Mitchell, KAR |
| Journal | Journal of Applied Physics |
| Volume | 72 |
| Pagination | 762-765 |
| Date Published | Jul |
| Type of Article | Article |
| ISBN Number | 0021-8979 |
| Keywords | BONDS, CHEMICAL PASSIVATION, ELECTRONIC-PROPERTIES, GAAS-SURFACES |
| Abstract | A new technique for bonding sulfur atoms to gallium arsenide surfaces is described. In this technique the surface is exposed to gas-phase atomic sulfur at 60-70-degrees-C. The resulting surfaces were characterized by angle-dependent x-ray photoelectron spectroscopy. The data show that, in contrast to passivation of GaAs by H2S at low temperatures, this technique yields a surface on which the sulfur is almost exclusively bonded only to gallium atoms. |
| URL | <Go to ISI>://A1992JD97100063 |
