@article {7250,
	title = {THE PASSIVATION OF GALLIUM-ARSENIDE SURFACES WITH ATOMIC SULFUR},
	journal = {Journal of Applied Physics},
	volume = {72},
	number = {2},
	year = {1992},
	note = {ISI Document Delivery No.: JD971Times Cited: 19Cited Reference Count: 23},
	month = {Jul},
	pages = {762-765},
	type = {Article},
	abstract = {A new technique for bonding sulfur atoms to gallium arsenide surfaces is described. In this technique the surface is exposed to gas-phase atomic sulfur at 60-70-degrees-C. The resulting surfaces were characterized by angle-dependent x-ray photoelectron spectroscopy. The data show that, in contrast to passivation of GaAs by H2S at low temperatures, this technique yields a surface on which the sulfur is almost exclusively bonded only to gallium atoms.},
	keywords = {BONDS, CHEMICAL PASSIVATION, ELECTRONIC-PROPERTIES, GAAS-SURFACES},
	isbn = {0021-8979},
	url = {<Go to ISI>://A1992JD97100063},
	author = {Gu, G. Y. and Ogryzlo, E. A. and Wong, P. C. and Zhou, M. Y. and Mitchell, K. A. R.}
}
