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Kinetic-Study Of Atomic-Hydrogen Etching Of Gaas(100). Journal of Applied Physics 1995, 77, 2155-2159.
Rate Constants For The Etching Of Gallium-Arsenide By Molecular-Iodine. Journal of Vacuum Science & Technology B 1992, 10, 668-674.
Surface Damage And Deposition On Gallium-Arsenide Resulting From Low-Energy Carbon Ion-Bombardment. Surface Science 1992, 271, 468-476.
Rate Constants For The Etching Of Gallium-Arsenide By Atomic Chlorine. Plasma Chemistry and Plasma Processing 1991, 11, 311-321.
Rate Constants For The Reaction Of Atomic And Molecular Bromine With Gallium-Arsenide. International Journal of Chemical Kinetics 1991, 23, 529-539.