@article {7028,
	title = {RATE CONSTANTS FOR THE ETCHING OF GALLIUM-ARSENIDE BY ATOMIC CHLORINE},
	journal = {Plasma Chemistry and Plasma Processing},
	volume = {11},
	number = {2},
	year = {1991},
	note = {ISI Document Delivery No.: FH606Times Cited: 4Cited Reference Count: 13},
	month = {Jun},
	pages = {311-321},
	type = {Article},
	abstract = {Known chlorine atom concentrations were prepared in a discharge flow system and used to etch the (100) face of a gallium arsenide single crystal. The etch rate was monitored by mass spectrometry, laser interferometry, and surface profilometry. In the temperature range from 90 to 160-degrees-C the reaction can be described by the rate law Etch rate = kP(cl) where k = 9 x 10(6+/-0.5) mu-m min-1 Torr-1 e-9+/-1)kcal/RT.},
	keywords = {EXPERIMENTAL, GaAs, PLASMA ETCHING, RATE CONSTANTS},
	isbn = {0272-4324},
	url = {<Go to ISI>://A1991FH60600009},
	author = {Ha, J. H. and Ogryzlo, E. A.}
}
