@article {3311,
	title = {KINETIC-STUDY OF ATOMIC-HYDROGEN ETCHING OF GAAS(100)},
	journal = {Journal of Applied Physics},
	volume = {77},
	number = {5},
	year = {1995},
	note = {ISI Document Delivery No.: RC303Times Cited: 3Cited Reference Count: 39},
	month = {Mar},
	pages = {2155-2159},
	type = {Article},
	keywords = {GaAs, GALLIUM-ARSENIDE, H-2, OXIDES, PLASMAS, RATE CONSTANTS, RESONANCE, SI, SILICON, SURFACES},
	isbn = {0021-8979},
	url = {<Go to ISI>://A1995RC30300054},
	author = {Elzey, J. W. and Meharg, P. F. A. and Ogryzlo, E. A.}
}
@article {7383,
	title = {RATE CONSTANTS FOR THE ETCHING OF GALLIUM-ARSENIDE BY MOLECULAR-IODINE},
	journal = {Journal of Vacuum Science \& Technology B},
	volume = {10},
	number = {2},
	year = {1992},
	note = {ISI Document Delivery No.: HN270Times Cited: 7Cited Reference Count: 19},
	month = {Mar-Apr},
	pages = {668-674},
	type = {Article},
	abstract = {The etching of the (100) face of gallium arsenide with molecular iodine has been studied at I2 pressures between 0.10 and 1.25 Torr and in the temperature range from 270 to 330-degrees-C. GaAs was found to be etched continuously at rates between 0.05 and 1.70-mu-m min-1 under these conditions. Although the etch rate appears to be first order with respect to I2 at pressures below 0.3 Torr, the order decreased at higher pressures. The data was analyzed in terms of two mechanisms, which have been proposed for the etching of semiconductors by halogen molecules. These are the "reversible dissociative adsorption" (RDA) mechanism, and the "surface site saturation" (SSS) mechanism. In the RDA mechanism the dissociative adsorption, which explains the nonlinear pressure dependence, occurs irreversibly at low pressure giving rise to first order kinetics with a first order rate constant (k1) which can be expressed in the following Arrhenius form: k1 = 10(4.7 +/- 0.2) mu-min-1 Torr-1 exp[ - (55 +/- 2) kJ mol - 1/RT]. At higher pressures, the dependence on I2 changes to half order and the composite half order rate constant (k1/2) can be represented by the equation: k1/2 = 10(6.5 +/- 0.9) mu-m-min-1 Torr-1/2 exp[ - (69 +/- 10) kJ mol-1/RT]. On the other hand, the SSS mechanism involves the reversible physisorption of I2 on the GaAs surface (governed by an equilibrium constant K) followed by a rate controlling reaction of this physisorbed species leads to products (governed by the rate constant k4). The values obtained for these two constants are: K = 10(-4.8 +/- 0.7) Torr-1 exp[ + ( 49 +/- 7) kJ mol-1/RT], and k4 = 10(9.2 +/- 0.4) mu-m-min-1 exp[ - (96 +/- 5) kJ mol-1/RT]. The etching is isotropic, and the major products are GaI3 and AsI3.},
	keywords = {ALGAAS, CHLORINE, CL2, GaAs, SYSTEM},
	isbn = {1071-1023},
	url = {<Go to ISI>://A1992HN27000018},
	author = {Wong, K. C. and Ogryzlo, E. A.}
}
@article {7326,
	title = {SURFACE DAMAGE AND DEPOSITION ON GALLIUM-ARSENIDE RESULTING FROM LOW-ENERGY CARBON ION-BOMBARDMENT},
	journal = {Surface Science},
	volume = {271},
	number = {3},
	year = {1992},
	note = {ISI Document Delivery No.: JA639Times Cited: 3Cited Reference Count: 20},
	month = {Jun},
	pages = {468-476},
	type = {Article},
	abstract = {A mass-separated carbon ion beam in the energy range of 20-500 eV was used in ultrahigh vacuum to study the ion-surface interactions that occur in alkane based reactive ion etching of GaAs. The effects of ion bombardment and of subsequent damage-removal treatments were determined by measuring the surface chemistry and band-bending changes with in situ polar-angle-dependent X-ray photoelectron spectroscopy. The study showed that carbon ion bombardment on GaAs even at 20 eV resulted in carbon incorporation and the formation of carbide species. Initially, slight sputtering occurred with a higher sputter yield for arsenic than that for gallium, but further ion exposure led to the formation of an amorphous carbon overlayer. The degree of arsenic depletion and the thickness of the damaged and carbon-contaminated layer increased with the impact energy. The carbon and carbide residues were not removed by annealing at 520-degrees-C. or by exposure to ultraviolet light/ozone. Bombardment with 100 eV hydrogen ions did remove the damage induced by carbon ion bombardment.},
	keywords = {FILMS, GaAs, INP},
	isbn = {0039-6028},
	url = {<Go to ISI>://A1992JA63900020},
	author = {Meharg, P. F. A. and Ogryzlo, E. A. and Bello, I. and Lau, W. M.}
}
@article {7028,
	title = {RATE CONSTANTS FOR THE ETCHING OF GALLIUM-ARSENIDE BY ATOMIC CHLORINE},
	journal = {Plasma Chemistry and Plasma Processing},
	volume = {11},
	number = {2},
	year = {1991},
	note = {ISI Document Delivery No.: FH606Times Cited: 4Cited Reference Count: 13},
	month = {Jun},
	pages = {311-321},
	type = {Article},
	abstract = {Known chlorine atom concentrations were prepared in a discharge flow system and used to etch the (100) face of a gallium arsenide single crystal. The etch rate was monitored by mass spectrometry, laser interferometry, and surface profilometry. In the temperature range from 90 to 160-degrees-C the reaction can be described by the rate law Etch rate = kP(cl) where k = 9 x 10(6+/-0.5) mu-m min-1 Torr-1 e-9+/-1)kcal/RT.},
	keywords = {EXPERIMENTAL, GaAs, PLASMA ETCHING, RATE CONSTANTS},
	isbn = {0272-4324},
	url = {<Go to ISI>://A1991FH60600009},
	author = {Ha, J. H. and Ogryzlo, E. A.}
}
@article {7103,
	title = {RATE CONSTANTS FOR THE REACTION OF ATOMIC AND MOLECULAR BROMINE WITH GALLIUM-ARSENIDE},
	journal = {International Journal of Chemical Kinetics},
	volume = {23},
	number = {6},
	year = {1991},
	note = {ISI Document Delivery No.: FN770Times Cited: 5Cited Reference Count: 21},
	month = {Jun},
	pages = {529-539},
	type = {Article},
	abstract = {The reaction of the (100) face of a gallium arsenide single crystal with atomic and molecular bromine has been studied in a discharge flow system at temperatures between 100 and 225-degrees-C and pressures between 0.1 and 40 torr. The reaction with Br2 was found to be first order in Br2 only at pressures below 1 torr. Temperature dependence studies in the linear range gave the activation energy and preexponential factor for the rate controlling reaction in the low pressure regime. The results are summarized in the following Arrhenius equation: k1 = 10(4.5 +/- .5)-mu-m min-1 torr-1 e-(26.6 +/- 4.2 kJ/mol)/RT Deviations from linearity at high pressures are discussed in terms of two alternative mechanisms. The reaction of GaAs with atomic bromine was also studied as a function of temperature, and found to have a temperature dependence described by the following Arrhenius equation: k3 = (2.0 +/- 0.5) x 10(4)-mu-m min-1 torr-1 e-(12.9 +/- 0.9)kJ/mol/RT.},
	keywords = {CHLORINE, FLUORINE, GaAs, SILICON},
	isbn = {0538-8066},
	url = {<Go to ISI>://A1991FN77000004},
	author = {Salusbury, I. M. and Ogryzlo, E. A.}
}
