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Intramolecular Hole Transfer at Sensitized TiO2 Interfaces

TitleIntramolecular Hole Transfer at Sensitized TiO2 Interfaces
Publication TypeJournal Article
Year of Publication2012
AuthorsHu, K, Robson, KCD, Johansson, PG, Berlinguette, CP, Meyer, GJ
JournalJOURNAL OF THE AMERICAN CHEMICAL SOCIETY
Volume134
Pagination8352-8355
Date PublishedMAY 23
ISSN0002-7863
Abstract

Three ruthenium compounds with triphenyl amine donors were anchored to nanocrystalline TiO2 thin films for interfacial electron-transfer studies. Molecular tuning of reduction potentials enabled the extent of hole transfer from the photo-oxidized ruthenium center to the triphenyl amine to be tuned from zero to unity. Kinetic data revealed two new insights into the unwanted interfacial recombination reaction of the injected electrons with the oxidized compounds. First, recombination was highly sensitive to the concentration of oxidized compounds present at the interface. Second, a significant enhancement of the open circuit photovoltage was realized without a change in the recombination kinetics, behavior attributed to translation of the hole away from the interface thereby generating a larger surface dipole.

DOI10.1021/ja3018175