@article {3350,
	title = {KINETIC-STUDY OF THE EFFECTS OF H, O, N, S, NO, NO2 AND O-2 ON THE SURFACE-STATES OF INGAAS AND GAAS},
	journal = {Journal of the Chemical Society-Faraday Transactions},
	volume = {91},
	number = {18},
	year = {1995},
	note = {ISI Document Delivery No.: RW341Times Cited: 0Cited Reference Count: 34},
	month = {Sep},
	pages = {3021-3026},
	type = {Article},
	abstract = {The photoluminescence intensities (PLIs) from 300 nm layers of In0.53Ga0.47As and GaAs have been used to monitor carrier lifetimes, in situ, during exposure of their surfaces to a number of gaseous species at 25 degrees C. PLIs have been observed to increase by a factor of 30-50 following a few seconds exposure to atomic hydrogen at gas-phase atom densities of ca. 10(13) cm(-3). For both semiconductors the PLI was found to be ca. 40\% lower while the surface was being exposed to these atoms. Additional exposure of the InGaAs to H atoms was found to reduce the PLI from this maximum by a factor of 2-3. Both the InGaAs and GaAs surfaces that had been passivated by hydrogen atoms could be de-passivated in less than a second by exposure to O, N, NO or NO2 at comparable gas-phase densities or, at a much slower rate, by exposure to O-2. The surfaces thus formed could be re-passivated by exposure to atomic hydrogen, but in the case of oxidizing species, the original behaviour of the InGaAs surface could only be restored with an HF wash. X-Ray photoelectron (XP) spectra of the surfaces under all these conditions were found to be indistinguishable. Exposure of the surface to S atoms was found to improve the passivation level of an HCl-washed surface by almost four orders of magnitude.},
	keywords = {HYDROGEN PLASMA PASSIVATION, INP, intensity, PHOTOLUMINESCENCE, REAL-TIME},
	isbn = {0956-5000},
	url = {<Go to ISI>://A1995RW34100009},
	author = {Gu, G. and Li, H. J. and Ogryzlo, E.}
}
@article {7326,
	title = {SURFACE DAMAGE AND DEPOSITION ON GALLIUM-ARSENIDE RESULTING FROM LOW-ENERGY CARBON ION-BOMBARDMENT},
	journal = {Surface Science},
	volume = {271},
	number = {3},
	year = {1992},
	note = {ISI Document Delivery No.: JA639Times Cited: 3Cited Reference Count: 20},
	month = {Jun},
	pages = {468-476},
	type = {Article},
	abstract = {A mass-separated carbon ion beam in the energy range of 20-500 eV was used in ultrahigh vacuum to study the ion-surface interactions that occur in alkane based reactive ion etching of GaAs. The effects of ion bombardment and of subsequent damage-removal treatments were determined by measuring the surface chemistry and band-bending changes with in situ polar-angle-dependent X-ray photoelectron spectroscopy. The study showed that carbon ion bombardment on GaAs even at 20 eV resulted in carbon incorporation and the formation of carbide species. Initially, slight sputtering occurred with a higher sputter yield for arsenic than that for gallium, but further ion exposure led to the formation of an amorphous carbon overlayer. The degree of arsenic depletion and the thickness of the damaged and carbon-contaminated layer increased with the impact energy. The carbon and carbide residues were not removed by annealing at 520-degrees-C. or by exposure to ultraviolet light/ozone. Bombardment with 100 eV hydrogen ions did remove the damage induced by carbon ion bombardment.},
	keywords = {FILMS, GaAs, INP},
	isbn = {0039-6028},
	url = {<Go to ISI>://A1992JA63900020},
	author = {Meharg, P. F. A. and Ogryzlo, E. A. and Bello, I. and Lau, W. M.}
}
