@article {3560,
	title = {EVIDENCE FOR REVERSIBLE DISSOCIATIVE ADSORPTION IN THE REACTION OF MOLECULAR CHLORINE WITH GALLIUM-ARSENIDE},
	journal = {Canadian Journal of Chemistry-Revue Canadienne De Chimie},
	volume = {73},
	number = {5},
	year = {1995},
	note = {ISI Document Delivery No.: RG959Times Cited: 2Cited Reference Count: 9},
	month = {May},
	pages = {735-739},
	type = {Article},
	abstract = {The reaction of molecular chlorine with the (100) face of a gallium arsenide crystal has been studied at pressures of Cl-2 between 0.10 and 9.0 Torr and in the temperature range from 90 to 110 degrees C. In contrast to an earlier report, the etch rate was found to be half order with respect to Cl-2. The similarity of these results to those obtained for the reaction of molecular chlorine and bromine with silicon points to a mechanism in which the gaseous halogen molecule is first physisorbed on the semiconductor surface and then dissociates into chemisorbed atoms. The data indicate that both steps occur reversibly at higher pressures, where the composite half-order rate constant can be represented by the Arrhenius equation: k(1/2) = 10(13.6+/-2.6) mu m min(-1) Torr(-1/2) e(-(100+/-19kJ) (mol-1/RT)) At low pressures the first-order rate constant is given by the equation: k(1) = 10(10.4+/-2.3) mu m min(-1) Torr(-1) e(-(76+/-16kJ) (mol-1/RT)},
	keywords = {bromine, DOPED POLYCRYSTALLINE SILICON, ETCHING, GALLIUM ARSENIDE, IODINE, KINETICS, MOLECULAR CHLORINE, RATE CONSTANTS},
	isbn = {0008-4042},
	url = {<Go to ISI>://A1995RG95900014},
	author = {Wong, K. C. and Ogryzlo, E. A.}
}
@article {2813,
	title = {THE ETCHING OF GALLIUM-ARSENIDE WITH IODINE MONOCHLORIDE},
	journal = {Journal of the Electrochemical Society},
	volume = {140},
	number = {1},
	year = {1993},
	note = {ISI Document Delivery No.: KF885Times Cited: 2Cited Reference Count: 7},
	month = {Jan},
	pages = {226-229},
	type = {Article},
	abstract = {The reaction of GaAs(100) with iodine monochloride has been studied at ICl pressures between 0.10 and 0.80 Torr and in the temperature range from 100 to 300-degrees-C. At low temperatures the etch rate is first order in ICl, and decreases as the temperature increases, dropping to a minimum at about 140-degrees-C. Above this temperature the order of the reaction drops below 1, and the etch rate increases with increasing temperature. This complex behavior is analyzed in terms of two distinct mechanisms. At low temperatures the negative temperature dependence is explained by a physisorption controlled mechanism and is characterized by the rate law Etch rate = 10(-5.8+/-0.2) mum min-1 Torr-1 e+(47+/-1 kJ mol-1/RT)P(ICl) At higher temperatures the data is consistent with a mechanism in which the ICl is dissociatively adsorbed on the GaAs. At low pressures the rate law is given by Etch rate = 10(5.6+/-1.7) mum min-1 Torr-1 e-(39+/-17 kJ mol-1/RT)P(ICl) At higher pressures the dissociative adsorption becomes reversible, the order of the reaction becomes one-half, and the rate law takes the form Etch rate = 10(4.4+/-0.1) mum min-1 Torr-1/2 e-(33+/-1 kJ mol-1/RT) square-root P(ICl)},
	keywords = {bromine, KINETICS, MOLECULAR CHLORINE, SILICON},
	isbn = {0013-4651},
	url = {<Go to ISI>://A1993KF88500047},
	author = {Hahn, L. L. and Wong, K. C. and Ogryzlo, E. A.}
}
