@article {3857,
	title = {Tensor LEED analyses for the (root 3x root 3)R30 degrees and c(4x2) structures formed by sulphur chemisorbed on the (111) surface of rhodium},
	journal = {Surface Science},
	volume = {345},
	number = {1-2},
	year = {1996},
	note = {ISI Document Delivery No.: TT592Times Cited: 17Cited Reference Count: 16},
	month = {Jan},
	pages = {101-109},
	type = {Article},
	abstract = {Tensor LEED analyses have been made for the Rh(111)-(root 3 x root 3)R30 degrees-S and Rh(lll)-c(4 x 2)-S surface structures formed by S chemisorbed at 1/3 and 1/2 monolayer coverages respectively. For the lower-coverage form, S adsorbs on the regular three-coordinate sites which continue the fee packing sequence; the S-Rh bond lengths are indicated to equal 2.23 Angstrom, and relaxations in the metallic structure are negligible. In the c(4 x 2) form, the adsorption occurs equally on both types of three-coordinate site (fee and hcp), although some surface Rh atoms bond to two S atoms while others bond to just one, and this sets up some interesting relaxations. Specifically, the S atoms displace laterally from the centre of the three-fold sites by 0.20 to 0.29 Angstrom, and the first metal layer is buckled by about 0.23 Angstrom. The first-to-second interlayer spacing in the metal expands to 2.26 Angstrom from the bulk value of 2.20 Angstrom. The average S-Rh bond lengths equal 2.22 Angstrom, and so they are not significantly changed from that in the low-coverage form. The structural evolution for S chemisorbed on the (111) surface of rhodium with increasing coverage is compared with the corresponding evolution on the Rh(110) surface.},
	keywords = {ABSORPTION FINE-STRUCTURE, ASSIGNMENT, chalcogens, CRYSTAL SURFACES, HOLLOW ADSORPTION SITE, LOW ENERGY ELECTRON DIFFRACTION (LEED), LOW INDEX SINGLE, NI(111), NO, rhodium, SURFACE RELAXATION},
	isbn = {0039-6028},
	url = {<Go to ISI>://A1996TT59200014},
	author = {Wong, K. C. and Liu, W. and Saidy, M. and Mitchell, K. A. R.}
}
@article {3547,
	title = {A LEED CRYSTALLOGRAPHIC ANALYSIS FOR THE HALF MONOLAYER STRUCTURE FORMED BY O AT THE ZR(0001) SURFACE},
	journal = {Surface Science},
	volume = {342},
	number = {1-3},
	year = {1995},
	note = {ISI Document Delivery No.: TH886Times Cited: 32Cited Reference Count: 35},
	month = {Nov},
	pages = {272-280},
	type = {Article},
	abstract = {A tensor LEED analysis has been made for the half monolayer structure formed by O absorbed at the Zr(0001) surface. The analysis uses intensity-versus-energy curves for eight independent diffracted beams measured at normal incidence. The best correspondence with the experimental intensity data is for a model in which O atoms occupy octahedral holes in an unreconstructed metallic structure, with 0.25 ML between the first and second metal layers, and another 0.25 ML between the second and third metal layers. These two (2 X 2)-O arrays are displaced laterally from one another by an unit translational vector of the Zr(0001) substrate. The O atoms induce both vertical and lateral relaxations in the three topmost Zr layers; the largest displacements being found in the second Zr layer. The averaged O-Zr bond length is 2.28 Angstrom, about 0.02 Angstrom shorter than the value in bulk ZrO.},
	keywords = {0001 SURFACE, 2)-O, ALPHA-AL2O3, chemisorption, ENERGY-ELECTRON-DIFFRACTION, INDUCED RECONSTRUCTION, LOW ENERGY ELECTRON DIFFRACTION (LEED), LOW INDEX SINGLE CRYSTAL, OXIDATION, OXYGEN, SURFACE RELAXATION, SURFACES, X, ZIRCONIUM},
	isbn = {0039-6028},
	url = {<Go to ISI>://A1995TH88600034},
	author = {Wang, Y. M. and Li, Y. S. and Mitchell, K. A. R.}
}
