@article {3857,
	title = {Tensor LEED analyses for the (root 3x root 3)R30 degrees and c(4x2) structures formed by sulphur chemisorbed on the (111) surface of rhodium},
	journal = {Surface Science},
	volume = {345},
	number = {1-2},
	year = {1996},
	note = {ISI Document Delivery No.: TT592Times Cited: 17Cited Reference Count: 16},
	month = {Jan},
	pages = {101-109},
	type = {Article},
	abstract = {Tensor LEED analyses have been made for the Rh(111)-(root 3 x root 3)R30 degrees-S and Rh(lll)-c(4 x 2)-S surface structures formed by S chemisorbed at 1/3 and 1/2 monolayer coverages respectively. For the lower-coverage form, S adsorbs on the regular three-coordinate sites which continue the fee packing sequence; the S-Rh bond lengths are indicated to equal 2.23 Angstrom, and relaxations in the metallic structure are negligible. In the c(4 x 2) form, the adsorption occurs equally on both types of three-coordinate site (fee and hcp), although some surface Rh atoms bond to two S atoms while others bond to just one, and this sets up some interesting relaxations. Specifically, the S atoms displace laterally from the centre of the three-fold sites by 0.20 to 0.29 Angstrom, and the first metal layer is buckled by about 0.23 Angstrom. The first-to-second interlayer spacing in the metal expands to 2.26 Angstrom from the bulk value of 2.20 Angstrom. The average S-Rh bond lengths equal 2.22 Angstrom, and so they are not significantly changed from that in the low-coverage form. The structural evolution for S chemisorbed on the (111) surface of rhodium with increasing coverage is compared with the corresponding evolution on the Rh(110) surface.},
	keywords = {ABSORPTION FINE-STRUCTURE, ASSIGNMENT, chalcogens, CRYSTAL SURFACES, HOLLOW ADSORPTION SITE, LOW ENERGY ELECTRON DIFFRACTION (LEED), LOW INDEX SINGLE, NI(111), NO, rhodium, SURFACE RELAXATION},
	isbn = {0039-6028},
	url = {<Go to ISI>://A1996TT59200014},
	author = {Wong, K. C. and Liu, W. and Saidy, M. and Mitchell, K. A. R.}
}
@article {3559,
	title = {Tensor LEED analysis for the Rh(110)-(3x2)-S surface structure},
	journal = {Surface Science},
	volume = {344},
	number = {3},
	year = {1995},
	note = {ISI Document Delivery No.: TQ239Times Cited: 6Cited Reference Count: 26},
	month = {Dec},
	pages = {258-266},
	type = {Article},
	abstract = {A tensor LEED analysis for the Rh(110)-(3 x 2)-S surface supports an arrangement of chemisorbed S atoms at 2/3 monolayer coverage on a basically unreconstructed metallic structure. Alternating [1(1) over bar0$] channels in the metal surface are occupied differently, although each has two S atoms per unit mesh. In one set, the S atoms occupy long-bridge and centre sites with a constant separation along the channel of 4.03 Angstrom. In the other set of channels, all S atoms occupy equivalent positions, displaced from regular centre sites by 0.39 Angstrom, to give successive S to S separations of 3.47 and 4.60 Angstrom. The long-bridge site bonding is a novel feature which is facilitated by the neighbouring topmost Rh atoms relaxing laterally by about 0.27 Angstrom perpendicular to the [1(1) over bar0$] row. Bucklings of 0.20 and 0.10 Angstrom are indicated to occur in the first and second Rh layers respectively; the latter value essentially equals that (0.11 Angstrom) reported earlier for the corresponding half monolayer c(2 x 2) surface. For S atoms at or near centre sites in the (3 x 2) structure, the average S-Rh bond distances are 2.42 and 2.29 Angstrom to the first and second layer Rh atoms respectively; the corresponding values at the long-bridge sites are 2.20 and 2.27 Angstrom.},
	keywords = {chalcogens, chemisorption, CRYSTAL SURFACES, ENERGY-ELECTRON-DIFFRACTION, GENERAL TRENDS, LOW ENERGY ELECTRON DIFFRACTION (LEED), LOW INDEX SINGLE, rhodium, SULFUR ADSORPTION, SURFACE RELAXATION AND RECONSTRUCTION},
	isbn = {0039-6028},
	url = {<Go to ISI>://A1995TQ23900020},
	author = {Wong, K. C. and Liu, W. and Mitchell, K. A. R.}
}
