@article {5117,
	title = {Tensor LEED analysis for the electrodeposited Pt(111)-(3x3)-Ag,I surface structure},
	journal = {Surface Science},
	volume = {490},
	number = {3},
	year = {2001},
	note = {ISI Document Delivery No.: 473XWTimes Cited: 5Cited Reference Count: 34},
	month = {Sep},
	pages = {256-264},
	type = {Article},
	abstract = {A crystallographic analysis is reported using low-energy electron diffraction (LEED) in the tensor LEED approach for the electrodeposited coadsorption (3 x 3) structure with 4/9 monolayer (ML) of silver and 4/9 ML of iodine on the Pt(1 1 1) surface. The structure approximates a two-layer slice of bulk AgI cut parallel to its (1 1 1) plane and superimposed on the substrate with the Ag atoms in contact with the topmost Pt(1 1 1) layer, and the I atoms forming an overlayer on the Ag atoms. There are two types of Ag atoms in the (3 x 3) unit mesh; one type bonds to a single Pt atom, while the other type bonds to three Pt atoms. The average Ag-Pt bond distances are close to 2.48 and 2.82 (A) over circle respectively for the one and three-coordinate Ag atoms, but both types of Ag atoms bond to three I atoms with an average Ag-I distance of 2.67 (A) over circle. No significant corrugation is observed for either the I layer or the Ag layer. (C) 2001 Elsevier Science B.V. All rights reserved.},
	keywords = {ADSORBATES, ADSORPTION, AG, chemisorption, ELECTROCHEMISTRY, ENERGY-ELECTRON-DIFFRACTION, IODINE, LOW ENERGY ELECTRON DIFFRACTION (LEED), METAL-SURFACES, platinum, PT(111), SCANNING-TUNNELING-MICROSCOPY, silver},
	isbn = {0039-6028},
	url = {<Go to ISI>://000171075300007},
	author = {Labayen, M. and Harrington, D. A. and Saidy, M. and Mitchell, K. A. R.}
}
@article {3560,
	title = {EVIDENCE FOR REVERSIBLE DISSOCIATIVE ADSORPTION IN THE REACTION OF MOLECULAR CHLORINE WITH GALLIUM-ARSENIDE},
	journal = {Canadian Journal of Chemistry-Revue Canadienne De Chimie},
	volume = {73},
	number = {5},
	year = {1995},
	note = {ISI Document Delivery No.: RG959Times Cited: 2Cited Reference Count: 9},
	month = {May},
	pages = {735-739},
	type = {Article},
	abstract = {The reaction of molecular chlorine with the (100) face of a gallium arsenide crystal has been studied at pressures of Cl-2 between 0.10 and 9.0 Torr and in the temperature range from 90 to 110 degrees C. In contrast to an earlier report, the etch rate was found to be half order with respect to Cl-2. The similarity of these results to those obtained for the reaction of molecular chlorine and bromine with silicon points to a mechanism in which the gaseous halogen molecule is first physisorbed on the semiconductor surface and then dissociates into chemisorbed atoms. The data indicate that both steps occur reversibly at higher pressures, where the composite half-order rate constant can be represented by the Arrhenius equation: k(1/2) = 10(13.6+/-2.6) mu m min(-1) Torr(-1/2) e(-(100+/-19kJ) (mol-1/RT)) At low pressures the first-order rate constant is given by the equation: k(1) = 10(10.4+/-2.3) mu m min(-1) Torr(-1) e(-(76+/-16kJ) (mol-1/RT)},
	keywords = {bromine, DOPED POLYCRYSTALLINE SILICON, ETCHING, GALLIUM ARSENIDE, IODINE, KINETICS, MOLECULAR CHLORINE, RATE CONSTANTS},
	isbn = {0008-4042},
	url = {<Go to ISI>://A1995RG95900014},
	author = {Wong, K. C. and Ogryzlo, E. A.}
}
