@article {OptiSil2006,
	title = {Study of muonium precession signals in optically excited silicon},
	journal = {Physica B: Condensed Matter},
	volume = {374{\textendash}375},
	year = {2006},
	note = {Proceedings of the Tenth International Conference on Muon Spin Rotation, Relaxation and Resonance Proceedings of the Tenth International Conference on Muon Spin Rotation, Relaxation and Resonance},
	pages = {412 - 414},
	abstract = {Many of the experiments on muonium interacting with photo-excited carriers are conducted at pulsed muon beam facilities and typically concentrate on studying the muon polarization in a longitudinal magnetic field. In this paper, we discuss some of the early progress we have recently made in carrying out optical excitation experiments on semiconductors at a continuous beam facility, i.e. TRIUMF. Here, additional information is potentially available because the muon precession signatures associated with the various paramagnetic and diamagnetic muonium signals can be monitored directly. Some results in high-resistivity Si are presented.},
	keywords = {SI},
	issn = {0921-4526},
	doi = {http://dx.doi.org/10.1016/j.physb.2005.11.119},
	url = {http://www.sciencedirect.com/science/article/pii/S0921452605013372},
	author = {B.E. Schultz and B. Hitti and Z. Salman and W.A. MacFarlane and H.N. Bani-Salameh and R.L. Lichti and I. Fan and J. Jung and K.H. Chow}
}
@article {4651,
	title = {Dimeric rhodium mu-silylene and mu-eta(2)-silyl complexes: Catalytic silicon-silicon bond formation and x-ray structures of [{Pr(i)(2)PCH2CH2PPr(i)(2)}Rh](2)(mu-SiRR {\textquoteright})(2) (R = R {\textquoteright} = Ph and R = Me, R {\textquoteright} = Ph) and [{Pr(i)(2)PCH2CH2PPr(i)(2)}Rh(H)](2)(},
	journal = {Organometallics},
	volume = {18},
	number = {6},
	year = {1999},
	note = {ISI Document Delivery No.: 178FRTimes Cited: 29Cited Reference Count: 32},
	month = {Mar},
	pages = {958-969},
	type = {Article},
	abstract = {The stoichiometric and catalytic reactions of secondary silanes with the rhodium hydride bridged dimer [(dippe)Rh](2)(mu-H)(2) (1; dippe = 1,2-bis(diisopropylphosphino)ethane) are described. The reaction of 1 with Ph2SiH2 results in the formation of the bis(mu-silylene) complex [(dippe)Rh](2)(mu-SiPh2)(2) (2a); a similar reaction ensues upon addition of MePhSiH2 or Me(p)TolSiH(2) ((P)Tol =p-tolyl) to 1 except that the bis(silylene) complexes exist as a mixture of cis and trans stereoisomers. Dimethylsilane reacts with 1 to generate the dinuclear complex [(dippe)Rh(H)](2)(mu-eta(2)-SiMe2)(2) (4d). The hydride dimer acts as a catalyst precursor for the dimerization of excess Ph2SiH2 to tetraphenyldisilane (Ph2SiHSiHPh2). A catalytic cycle is proposed that consists of dinuclear intermediates.},
	keywords = {BONDS, hydride complexes, HYDROSILYLATION, REACTIVITY, SECONDARY SILANES, SI, TRANSITION-METAL COMPLEXES},
	isbn = {0276-7333},
	url = {<Go to ISI>://000079256000005},
	author = {Rosenberg, L. and Fryzuk,Michael D. and Rettig, S. J.}
}
@article {3311,
	title = {KINETIC-STUDY OF ATOMIC-HYDROGEN ETCHING OF GAAS(100)},
	journal = {Journal of Applied Physics},
	volume = {77},
	number = {5},
	year = {1995},
	note = {ISI Document Delivery No.: RC303Times Cited: 3Cited Reference Count: 39},
	month = {Mar},
	pages = {2155-2159},
	type = {Article},
	keywords = {GaAs, GALLIUM-ARSENIDE, H-2, OXIDES, PLASMAS, RATE CONSTANTS, RESONANCE, SI, SILICON, SURFACES},
	isbn = {0021-8979},
	url = {<Go to ISI>://A1995RC30300054},
	author = {Elzey, J. W. and Meharg, P. F. A. and Ogryzlo, E. A.}
}
@article {2704,
	title = {CHARACTERIZATION OF SPUTTER DEPOSITED INCONEL CARBON X-RAY MULTILAYERS},
	journal = {Journal of Vacuum Science \& Technology a-Vacuum Surfaces and Films},
	volume = {11},
	number = {1},
	year = {1993},
	note = {ISI Document Delivery No.: KH557Times Cited: 4Cited Reference Count: 25},
	month = {Jan-Feb},
	pages = {115-124},
	type = {Article},
	abstract = {The reflectivity of x-ray multilayers made of new pairs of materials was theoretically calculated at a wavelength of 45 angstrom. Carbon and inconel were then selected for {\textquoteright}{\textquoteright}low index{\textquoteright}{\textquoteright} and {\textquoteright}{\textquoteright}high index{\textquoteright}{\textquoteright} layers, respectively, in the multilayer system. Single layers, bilayers, and multilayers of carbon and inconel were characterized by grazing x-ray reflectometry (GXR), x-ray photoelectron spectroscopy (XPS), Auger electron spectroscopy (AES), and spectroscopic ellipsometry (SE). From GXR data at 1.54 angstrom refractive indices and film thicknesses of inconel and carbon layers were obtained. From an analysis of SE data, the dielectric function and the thickness as of inconel and carbon thin films were deduced. XPS and AES measurements revealed the presence of carbides at the interface between carbon and inconel. GXR analysis was performed on ten-layer C/inconel multilayers. The GXR interference pattern was found to broaden after annealing the samples at 600-degrees-C.},
	keywords = {CARBIDE, FILMS, OPTICS, SI, STABILITY},
	isbn = {0734-2101},
	url = {<Go to ISI>://A1993KH55700015},
	author = {Aouadi, M. S. and Parsons, R. R. and Wong, P. C. and Mitchell, K. A. R.}
}
@article {7139,
	title = {RATE CONSTANTS FOR THE ETCHING OF INTRINSIC AND DOPED POLYCRYSTALLINE SILICON BY BROMINE ATOMS},
	journal = {Journal of Applied Physics},
	volume = {69},
	number = {4},
	year = {1991},
	note = {ISI Document Delivery No.: EZ664Times Cited: 21Cited Reference Count: 15},
	month = {Feb},
	pages = {2635-2638},
	type = {Article},
	abstract = {{The rate constants for the reaction of bromine atoms with intrinsic and heavily doped n+-type polycrystalline silicon, as well as their temperature dependencies, are reported for the first time. The rate constant for intrinsic silicon is given as k = (4 +/- 2) x 10(7) nm min-1 Torr-1e-(62 +/- 2kJ/mol)/RT and for n+-type silicon with a phosphorus number density of 5 x 10(18) cm-3},
	keywords = {CHLORINE, FLUORINE, SI, SURFACE},
	isbn = {0021-8979},
	url = {<Go to ISI>://A1991EZ66400126},
	author = {Walker, Z. H. and Ogryzlo, E. A.}
}
@article {7020,
	title = {REACTIONS OF SILANES WITH THE BINUCLEAR HYDRIDE [(PR(I)2PCH2CH2PPR(I)2)RH]2(MU-H)2 - CATALYTIC DEUTERIUM-EXCHANGE ON DIPHENYLSILANE AND X-RAY STRUCTURE OF [(PR(I)2PCH2CH2PPR(I)2)RH]2(MU-H)(MU-ETA-2-HSIPH2)},
	journal = {Organometallics},
	volume = {10},
	number = {8},
	year = {1991},
	note = {ISI Document Delivery No.: GA275Times Cited: 45Cited Reference Count: 25},
	month = {Aug},
	pages = {2537-2539},
	type = {Note},
	abstract = {Stoichiometric reactions of diphenylsilane (H2SiPh2) with [(dippe)Rh]2(mu-H)2 (1; dippe = 1,2-bis(diisopropylphosphino)ethane) have produced the new compounds [(dippe)Rh]2(mu-H)(mu-eta-2-HSiPh2) (2) and [(dippe)-Rh]2(mu-SiPh2)2 (3). An X-ray structure determination of 2 indicates the presence of a three-center, two-electron Rh-Si-H interaction. Deuterium exchange and silicon-silicon coupling to give 1,1,2,2-tetraphenyldisilane are both observed for diphenylsilane in the presence of catalytic amounts of 1; the isolated silyl-dihydride complex 2 and the bis(silylene) derivative 3 are likely to be active in these catalytic cycles.},
	keywords = {BONDS, CRYSTAL, HYDROSILATION, MOLECULAR-STRUCTURE, MU-SILYLENE COMPLEXES, POLYMERIZATION, PRIMARY ORGANOSILANES, SI, SILICON},
	isbn = {0276-7333},
	url = {<Go to ISI>://A1991GA27500005},
	author = {Fryzuk,Michael D. and Rosenberg, L. and Rettig, S. J.}
}
