@article {7383,
	title = {RATE CONSTANTS FOR THE ETCHING OF GALLIUM-ARSENIDE BY MOLECULAR-IODINE},
	journal = {Journal of Vacuum Science \& Technology B},
	volume = {10},
	number = {2},
	year = {1992},
	note = {ISI Document Delivery No.: HN270Times Cited: 7Cited Reference Count: 19},
	month = {Mar-Apr},
	pages = {668-674},
	type = {Article},
	abstract = {The etching of the (100) face of gallium arsenide with molecular iodine has been studied at I2 pressures between 0.10 and 1.25 Torr and in the temperature range from 270 to 330-degrees-C. GaAs was found to be etched continuously at rates between 0.05 and 1.70-mu-m min-1 under these conditions. Although the etch rate appears to be first order with respect to I2 at pressures below 0.3 Torr, the order decreased at higher pressures. The data was analyzed in terms of two mechanisms, which have been proposed for the etching of semiconductors by halogen molecules. These are the "reversible dissociative adsorption" (RDA) mechanism, and the "surface site saturation" (SSS) mechanism. In the RDA mechanism the dissociative adsorption, which explains the nonlinear pressure dependence, occurs irreversibly at low pressure giving rise to first order kinetics with a first order rate constant (k1) which can be expressed in the following Arrhenius form: k1 = 10(4.7 +/- 0.2) mu-min-1 Torr-1 exp[ - (55 +/- 2) kJ mol - 1/RT]. At higher pressures, the dependence on I2 changes to half order and the composite half order rate constant (k1/2) can be represented by the equation: k1/2 = 10(6.5 +/- 0.9) mu-m-min-1 Torr-1/2 exp[ - (69 +/- 10) kJ mol-1/RT]. On the other hand, the SSS mechanism involves the reversible physisorption of I2 on the GaAs surface (governed by an equilibrium constant K) followed by a rate controlling reaction of this physisorbed species leads to products (governed by the rate constant k4). The values obtained for these two constants are: K = 10(-4.8 +/- 0.7) Torr-1 exp[ + ( 49 +/- 7) kJ mol-1/RT], and k4 = 10(9.2 +/- 0.4) mu-m-min-1 exp[ - (96 +/- 5) kJ mol-1/RT]. The etching is isotropic, and the major products are GaI3 and AsI3.},
	keywords = {ALGAAS, CHLORINE, CL2, GaAs, SYSTEM},
	isbn = {1071-1023},
	url = {<Go to ISI>://A1992HN27000018},
	author = {Wong, K. C. and Ogryzlo, E. A.}
}
@article {7034,
	title = {CHARACTERIZATION OF AN ATMOSPHERIC-PRESSURE PARALLEL-PLATE CAPACITIVELY COUPLED RADIOFREQUENCY PLASMA},
	journal = {Applied Spectroscopy},
	volume = {45},
	number = {9},
	year = {1991},
	note = {ISI Document Delivery No.: GR646Times Cited: 17Cited Reference Count: 37},
	month = {Nov},
	pages = {1468-1477},
	type = {Article},
	abstract = {A new design for a radio-frequency, atmospheric-pressure, parallel-plate capacitively coupled plasma (CCP) which uses water-cooled electrodes is described. Four different sizes of quartz tubes were compared with respect to spatial emission features for support gas and analyte species. Torches studied had the following inside dimensions: a 1-mm capillary tube with round cross section, a 2 x 4 mm tube, a 4 x 4 mm tube, and a 6 x 6 mm tube. Relative emission intensities of near-infrared lines for F, Cl, Br, I, C, N, and O atomic and ionic lines excited with the use of the He-CCP are tabulated. The detection limits range from 10 to 78 pg/s.},
	keywords = {ARGON, ATOMIC EMISSION SPECTROSCOPY, capacitively coupled plasma, CHLORINE, DETECTOR, EXCITATION, GAS-CHROMATOGRAPHIC, HELIUM PLASMA, MICROWAVE-INDUCED PLASMA, NEAR-INFRARED EMISSION, NONMETAL ATOMIC EMISSION, RED, SPECTRA, SPECTROMETRY},
	isbn = {0003-7028},
	url = {<Go to ISI>://A1991GR64600012},
	author = {Huang, D. G. and Blades, M. W.}
}
@article {7139,
	title = {RATE CONSTANTS FOR THE ETCHING OF INTRINSIC AND DOPED POLYCRYSTALLINE SILICON BY BROMINE ATOMS},
	journal = {Journal of Applied Physics},
	volume = {69},
	number = {4},
	year = {1991},
	note = {ISI Document Delivery No.: EZ664Times Cited: 21Cited Reference Count: 15},
	month = {Feb},
	pages = {2635-2638},
	type = {Article},
	abstract = {{The rate constants for the reaction of bromine atoms with intrinsic and heavily doped n+-type polycrystalline silicon, as well as their temperature dependencies, are reported for the first time. The rate constant for intrinsic silicon is given as k = (4 +/- 2) x 10(7) nm min-1 Torr-1e-(62 +/- 2kJ/mol)/RT and for n+-type silicon with a phosphorus number density of 5 x 10(18) cm-3},
	keywords = {CHLORINE, FLUORINE, SI, SURFACE},
	isbn = {0021-8979},
	url = {<Go to ISI>://A1991EZ66400126},
	author = {Walker, Z. H. and Ogryzlo, E. A.}
}
@article {7103,
	title = {RATE CONSTANTS FOR THE REACTION OF ATOMIC AND MOLECULAR BROMINE WITH GALLIUM-ARSENIDE},
	journal = {International Journal of Chemical Kinetics},
	volume = {23},
	number = {6},
	year = {1991},
	note = {ISI Document Delivery No.: FN770Times Cited: 5Cited Reference Count: 21},
	month = {Jun},
	pages = {529-539},
	type = {Article},
	abstract = {The reaction of the (100) face of a gallium arsenide single crystal with atomic and molecular bromine has been studied in a discharge flow system at temperatures between 100 and 225-degrees-C and pressures between 0.1 and 40 torr. The reaction with Br2 was found to be first order in Br2 only at pressures below 1 torr. Temperature dependence studies in the linear range gave the activation energy and preexponential factor for the rate controlling reaction in the low pressure regime. The results are summarized in the following Arrhenius equation: k1 = 10(4.5 +/- .5)-mu-m min-1 torr-1 e-(26.6 +/- 4.2 kJ/mol)/RT Deviations from linearity at high pressures are discussed in terms of two alternative mechanisms. The reaction of GaAs with atomic bromine was also studied as a function of temperature, and found to have a temperature dependence described by the following Arrhenius equation: k3 = (2.0 +/- 0.5) x 10(4)-mu-m min-1 torr-1 e-(12.9 +/- 0.9)kJ/mol/RT.},
	keywords = {CHLORINE, FLUORINE, GaAs, SILICON},
	isbn = {0538-8066},
	url = {<Go to ISI>://A1991FN77000004},
	author = {Salusbury, I. M. and Ogryzlo, E. A.}
}
@article {7141,
	title = {RATE CONSTANTS FOR THE REACTION OF CL ATOMS WITH INTRINSIC AND N+-DOPED POLYCRYSTALLINE SILICON},
	journal = {Journal of Applied Physics},
	volume = {69},
	number = {1},
	year = {1991},
	note = {ISI Document Delivery No.: ER430Times Cited: 15Cited Reference Count: 12},
	month = {Jan},
	pages = {548-549},
	type = {Note},
	abstract = {The reaction of Cl atoms with intrinsic an n+-doped polycrystalline silicon has been studied at a Cl partial pressure of 0.17 Torr and in the temperature ranges from 150 to 290-degrees-C and 25 to 90-degrees-C for the two materials, respectively. The reaction with n+-doped silicon was observed to proceed 90 times faster than with intrinsic silicon at any given temperature, i.e., within experimental error the difference in the rate constants for the two materials was found to be entirely attributable to a change in the pre-exponential factor, with the activation energy remaining unchanged. The rate constant for the reaction is given by (9 +/- 2) x 10(5) nm min-1 Torr(-1 exp-28.2 +/- 1.2 kJ/mol)/RT for the intrinsic material and (7 +/- 3) x 10(7) nm min-1 Torr exp-(27.8 +/- 1.5 kJ/mol)/RT for the phosphorus doped material with a dopant density of 5 x 10(18) cm-3.},
	keywords = {CHLORINE, FLUORINE-ATOMS, PRODUCTS},
	isbn = {0021-8979},
	url = {<Go to ISI>://A1991ER43000098},
	author = {Walker, Z. H. and Ogryzlo, E. A.}
}
