@article {7139,
	title = {RATE CONSTANTS FOR THE ETCHING OF INTRINSIC AND DOPED POLYCRYSTALLINE SILICON BY BROMINE ATOMS},
	journal = {Journal of Applied Physics},
	volume = {69},
	number = {4},
	year = {1991},
	note = {ISI Document Delivery No.: EZ664Times Cited: 21Cited Reference Count: 15},
	month = {Feb},
	pages = {2635-2638},
	type = {Article},
	abstract = {{The rate constants for the reaction of bromine atoms with intrinsic and heavily doped n+-type polycrystalline silicon, as well as their temperature dependencies, are reported for the first time. The rate constant for intrinsic silicon is given as k = (4 +/- 2) x 10(7) nm min-1 Torr-1e-(62 +/- 2kJ/mol)/RT and for n+-type silicon with a phosphorus number density of 5 x 10(18) cm-3},
	keywords = {CHLORINE, FLUORINE, SI, SURFACE},
	isbn = {0021-8979},
	url = {<Go to ISI>://A1991EZ66400126},
	author = {Walker, Z. H. and Ogryzlo, E. A.}
}
