@article {3743,
	title = {Monitoring of the formation and removal of bulk, surface, and interfacial carrier traps on silicon(100)},
	journal = {Canadian Journal of Physics},
	volume = {74},
	year = {1996},
	note = {ISI Document Delivery No.: WU206Times Cited: 8Cited Reference Count: 177th Canadian Semiconductor Technology ConferenceAUG 14-18, 1995OTTAWA, CANADANatl Res Council CanadaSuppl. 1},
	pages = {S233-S238},
	type = {Proceedings Paper},
	abstract = {An RF probe was used to monitor the steady-state photo-generated carrier concentration in silicon with and without an oxide layer. The changes in this steady-state concentration during exposure to gaseous molecular and atomic species such as He, H-2, O-2, H, and O at temperatures between 25 and 450 degrees C are interpreted in terms of changes in the bulk silicon, interface, and exposed surface. The initial experiments established the relationship between the carrier concentration and the RF-probe signal, and distinguished between changes in the bulk, and on silicon surfaces and interfaces. It was found that in the case of hydrogen, bulk passivation and depassivation by H-2 can be observed only at elevated temperatures, with or without an oxide layer. H-atom depassivation can be observed at all temperatures and is irreversible at room temperature. The formation of an oxide layer by exposure to O atoms at 25 and 450 degrees C was followed, and the oxides formed were then treated in an attempt to create an SiO2/Si interface with an acceptable density of interfacial states.},
	keywords = {111 SI-SIO2 INTERFACE, ATOMIC-HYDROGEN, H-2, KINETICS, PASSIVATION, PB CENTERS, SI/SIO2 INTERFACE, STATES, TEMPERATURE},
	isbn = {0008-4204},
	url = {<Go to ISI>://A1996WU20600047},
	author = {Li, H. J. and Ogryzlo, E. A.}
}
