@article {4403,
	title = {SIMS studies of the effect of H at interfaces formed by oxidized zirconium},
	journal = {Canadian Journal of Chemistry-Revue Canadienne De Chimie},
	volume = {76},
	number = {12},
	year = {1998},
	note = {ISI Document Delivery No.: 180RKTimes Cited: 2Cited Reference Count: 13},
	month = {Dec},
	pages = {1796-1799},
	type = {Article},
	abstract = {Secondary ion mass spectrometry (SIMS) has been used to guide the search for an oxidation procedure that can produce a thin and relatively sharp oxide layer on macroscopic zirconium. A new preparation based on dip coating in H2O2 solution is indicated to be suitable for this purpose. SIMS further indicates that the oxide interface, for such a prepared sample, shows substantial degradation when it is heated in H-2 gas at 300 degrees C. The presence of H appears to facilitate O migration into the metallic region, an observation that supplements those made previously on oxidized thin-film samples of zirconium prepared by deposition under ultrahigh-vacuum conditions.},
	keywords = {electron, GROWTH, HYDROGEN, interfacial reactivity, OXIDATION, OXIDE, oxidized, OXYGEN, secondary ion mass spectrometry, SURFACES, THIN-FILMS, XPS INVESTIGATIONS, ZIRCONIUM, ZR(0001)},
	isbn = {0008-4042},
	url = {<Go to ISI>://000079398800002},
	author = {Shimizu, K. and Flinn, B. J. and Wong, P. C. and Mitchell, K. A. R.}
}
