|Title||Resistivity-microstructure correlation of self-annealed electrodeposited copper thin films|
|Publication Type||Journal Article|
|Year of Publication||2012|
|Authors||Alshwawreh, N, Militzer, M, Bizzotto, D, Kuo, JC|
The microstructure evolution of electrodeposited copper thin films was studied at room temperature where self-annealing occurs with a transition from a nano to micrograin structures. The effect of depo- sition current density on the self-annealing rate of 1 lm-thick films was characterized by resistivity and in situ electron backscatter diffraction (EBSD). The progress of self-annealing at the film surface was captured during the first 10 h after deposition. The recrystallized grains appeared to have relatively high image quality, high twin density and low local orientation spread. The correlation between resistiv- ity, image quality, grain average image quality and local orientation spread during self-annealing was investigated. A grain size threshold was used as a criterion to assess the fraction recrystallized of the microstructure as a function of time after deposition. The fractions recrystallized from resistivity and EBSD for films deposited at 30 and 40 mA/cm2 current densities were then compared. The self-annealing rate estimated from EBSD is in reasonable agreement with the rate of resistivity drop.