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OXIDE THICKNESS EFFECT AND SURFACE ROUGHENING IN THE DESORPTION OF THE OXIDE FROM GAAS

TitleOXIDE THICKNESS EFFECT AND SURFACE ROUGHENING IN THE DESORPTION OF THE OXIDE FROM GAAS
Publication TypeJournal Article
Year of Publication1991
AuthorsVanbuuren, T, Weilmeier, MK, Athwal, I, Colbow, KM, Mackenzie, JA, Tiedje, T, Wong, PC, Mitchell, KAR
JournalApplied Physics Letters
Volume59
Pagination464-466
Date PublishedJul
Type of ArticleArticle
ISBN Number0003-6951
KeywordsMOLECULAR-BEAM EPITAXY, RAY PHOTOELECTRON-SPECTROSCOPY
Abstract

The temperature for thermal desorption of the gallium oxide from GaAs is shown to increase linearly with oxide thickness. In addition, we show by diffuse light scattering that highly polished GaAs substrates roughen during the oxide desorption. These results are interpreted in terms of a model in which the oxide evaporates inhomogeneously.

URL<Go to ISI>://A1991FX62600029