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Muonium dynamics in doped Si probed by photoexcited TF-$μ$SR measurements

TitleMuonium dynamics in doped Si probed by photoexcited TF-$μ$SR measurements
Publication TypeJournal Article
Year of Publication2009
AuthorsFan, I, Chow, KH, Egilmez, M, Hitti, B, Carroll, BR, Vernon, JE, Mansour, AI, Scheuermann, R, Schultz, BE, MacFarlane, WA, Jung, J, Lichti, RL
JournalPhysica B: Condensed Matter
Volume404
Pagination852 - 855
ISSN0921-4526
KeywordsMuon spin rotation/relaxation/resonance
Abstract

Photoexcited TF- μ \{SR\} measurements have been used recently to investigate muonium dynamics in high resistivity Si. In this paper, we report investigations of p-type and n-type Si. It is shown that illumination can induce a change in the relaxation rates of the detected muon signal in differently doped samples under both \{LF\} and \{TF\} configurations. In addition, the temperature dependence of Mu \{BC\} + in p-type Si suggests that the diamagnetic charge exchange processes are similar to that of intrinsic Si.

URLhttp://www.sciencedirect.com/science/article/pii/S0921452608006881
DOI10.1016/j.physb.2008.11.154