|Title||Characterization of a Co-Se thin film by scanning Auger microscopy and Raman spectroscopy|
|Publication Type||Journal Article|
|Year of Publication||2006|
|Authors||Teo, M, Wong, PC, Zhu, L, Susac, D, Campbell, SA, Mitchell, KAR, Parsons, RR, Bizzotto, D|
|Journal||Applied Surface Science|
Scanning Auger microscopy and micro-Raman spectroscopy are combined to characterize a Co-Se thin film sample, containing 84 at.% Se, which had been modified in localized areas following excitation with an intense focused Ar+ laser (514.5 nm). The information obtained helps to establish that a previous assignment for a Co-Se sample of Raman features between 168 and 175 cm(-1) actually refers to an oxygenated Co-Se species, and that Co-Se interactions in a Se-rich environment give rise to Raman structure between 181 and 184 cm(-1). Comparisons are made for the use of Ar+ and HeNe laser sources for Raman measurements in this context; the latter in general gives both better resolution and better signal-to-noise characteristics. (c) 2006 Elsevier B.V. All rights reserved.
|URL||<Go to ISI>://000242818000015|